KUALA LUMPUR, Kioxia Corporation, the inventor of NAND flash memory, was honoured by FMS: the Future of Memory and Storage with 2024 Lifetime Achievement Award for 3D NAND flash invention.

This breakthrough technology has become fundamental to a wide range of computing applications, including advanced smartphones, personal computers, solid state drives (SSDs), data centres, artificial intelligence, and industrial.

‘Our technology has created a new paradigm in the industry, enabling flash memory to vastly increase storage density per cell, die and package.

‘I am excited to see our achievements recognised and look forward to witnessing their continued influence in the years to come,” said its vice president and technology executive for Memory Division, Atsushi Inoue in a statement.

The Kioxia engineering team, consisting of Hideaki Aochi, Ryota Katsumata, Masaru Kito, Masaru Kido, and Hiroyasu Tanaka, will accept this prestigious award for its pioneering work in developing and commercialising 3D flash memor
y.

Kioxia presented the concept of BiCS FLASH 3D flash memory technology at the VLSI Symposium in 2007. After announcing the prototype, Kioxia continued development to optimise the technology for mass production, eventually introducing the world’s first 256 gigabit, 48-layer 3D flash memory in 2015.

With a 3D stacked structure that boosts capacity and performance, BiCS FLASH 3D flash memory has been a transformational force in the storage industry.

The technology has enabled higher density storage solutions while maintaining reliability and efficiency, significantly enhancing the capabilities of data centres, consumer electronics, and mobile devices, setting a new standard for flash memory technology.

By leveraging vertical stacking, Kioxia’s BiCS FLASH technology addressed the limitations of planar NAND flash, paving the way for future developments in memory storage solutions, and reinforcing Kioxia Corporation as an industry leader.

Source: BERNAMA News Agency